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Wednesday, July 8, 2009

Printed silicon-nanoparticle transistor reaches amorphous-silicon performance

NanoGram Corporation (Milpitas, CA) announced the first fabrication of a thin-film transistor (TFT) produced from ambient printed nanosilicon to reach a carrier mobility of 2.0 cm2/Vs. The TFT is based on a nonpyrophoric material and was produced by Sharp Laboratories of America (Camas, WA), a subsidiary of Sharp (Osaka, Japan).

NanoGram's printable silicon material is based on nanoscale crystalline silicon particles formulated into inks, which can be ink-jetted or spin-coated onto a substrate and then fabricated into a TFT. The proprietary ink technology was developed as part of NanoGram's technology-development agreement with Teijin Limited (Osaka, Japan).


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