Raytheon Company's (NYSE: RTN) innovative gallium nitride (GaN) chips have achieved 1,000 hours of reliable operation, positioning this technology as the standard for next generation radar capability.
GaN technology provides increased reliability and efficiency, resulting in lower prime power consumption and relaxed cooling requirements. Thus, GaN T/R modules provide significantly higher long-pulse radio frequency (RF) power than that of standard gallium arsenide (GaAs) T/R modules.
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