DID has reported extensively on research contracts related to Gallium Nitride (GaN) semiconductors, which offer significantly higher power and performance. Unfortunately, they present manufacturing and cost challenges that have stymied their use in commercial applications.
In May 2005, Compound Semiconductor Magazine offered an excellent overview of the GaN wide-bandgap semiconductors program and DARPA’s goals. Key program objectives include rapid transition of the technology developed into military systems. Other important goals include a “great” improvement in understanding the physical reasons behind device failures and the development of physical models to predict performance, reproducible device and MMIC fabrication processes, and improved thermal management and packaging. Reliability is expected to be a key challenge.
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