NIST researchers create flexible memory circuits that act like memristors
Researchers at the U.S. National Institute of Standards and Technology (NIST), in Gaithersburg, Md., report in the July 2009 issue of IEEE Electron Device Letters that they have created a low-power, inexpensive flexible memory that has the properties of a memristor. Memristors can be used to make brainlike circuits and nanoelectronic memories, because they ”remember” the amount of current that has flowed through them, and that memory is reflected in the device’s resistance.
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